NXH020P120MNF1PG

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

PIM F1 SIC HALFBRIDGE 1200V 20MO

Technical Parameters

Parameter Value
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 2 N-Channel (Dual) Common Source
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 51A (Tc)
Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 20V
Vgs(th) (Max) @ Id 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 213.5nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 2420pF @ 800V
Power - Max 119W (Tj)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package -

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