NXH040F120MNF1PG

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

PIM F1 SIC FULL BRIDGE 1200V 40M

Technical Parameters

Parameter Value
Product Status Active
Technology Silicon Carbide (SiC)
Configuration 4 N-Channel
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 56mOhm @ 25A, 20V
Vgs(th) (Max) @ Id 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 122.1nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 1505pF @ 800V
Power - Max 74W (Tj)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 22-PIM (33.8x42.5)

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