FDY1002PZ-G

Manufacturer: onsemi
Category: FET, MOSFET Arrays

Description

IC

Technical Parameters

Parameter Value
Product Status Last Time Buy
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 830mA (Ta)
Rds On (Max) @ Id, Vgs 500mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 135pF @ 10V
Power - Max 446mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563

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