CSD87330Q3DT
Manufacturer:
Texas Instruments
Category:
FET, MOSFET Arrays
Description
PROTOTYPE
$0.00
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA, 1.15V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 5.8nC @ 4.5V, 11.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 15V, 1632pF @ 15V |
| Power - Max | 6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerLDFN |
| Supplier Device Package | 8-LSON (3.3x3.3) |