DTDG14GPT100

Manufacturer: ROHM Semiconductor

Description

TRANS PREBIAS NPN 2W MPT3

Technical Parameters

Parameter Value
Product Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Resistor - Base (R1) -
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 500mA
Current - Collector Cutoff (Max) 500nA (ICBO)
Frequency - Transition 80 MHz
Power - Max 2 W
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package MPT3

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