DTD143ESTP

Manufacturer: ROHM Semiconductor

Description

TRANS DIGITAL BJT NPN 500MA 3-PI

Technical Parameters

Parameter Value
Product Status Active
Transistor Type NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200 MHz
Power - Max 300 mW
Mounting Type Through Hole
Package / Case SC-72 Formed Leads
Supplier Device Package SPT

Industry News