DTB543ZMT2L

Manufacturer: ROHM Semiconductor

Description

TRANSISTOR

Technical Parameters

Parameter Value
Product Status Active
Transistor Type PNP - Pre-Biased + Diode
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 12 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 260 MHz
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VMT3

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