2SD1963T100Q
Manufacturer:
ROHM Semiconductor
Category:
Single Bipolar Transistors
Description
TRANS GP BJT NPN 20V 3A 4-PIN(3+
$0.00
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 25mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V |
| Power - Max | 500 mW |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | MPT3 |