2SC2812-7-TB-E

Manufacturer: onsemi

Description

2SC2812 - NPN EPITAXIAL PLANAR S

Technical Parameters

Parameter Value
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 6V
Power - Max 200 mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-CP

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