2SB1229T-AA

Manufacturer: onsemi

Description

2SB1229 - PNP EPITAXIAL PLANAR S

Technical Parameters

Parameter Value
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V
Power - Max 750 mW
Frequency - Transition 150MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package 3-NP

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