2SD1247S-AE

Manufacturer: onsemi

Description

2SD1247 - NPN EPITAXIAL PLANAR S

Technical Parameters

Parameter Value
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 2.5 A
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 75mA, 1.5A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V
Power - Max 1 W
Frequency - Transition 150MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package 3-MP

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