2SB1135R

Manufacturer: onsemi

Description

2SB1135 - PNP EPITAXIAL PLANAR S

Technical Parameters

Parameter Value
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 7 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 400mA, 4A
Current - Collector Cutoff (Max) 100μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 2V
Power - Max 2 W
Frequency - Transition 10MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220ML

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