2SD1111-AA
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Description
2SD1111 - NPN EPITAXIAL PLANAR S
$0.00
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Obsolete |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 100μA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5000 @ 50mA, 2V |
| Power - Max | 600 mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | 3-NP |