EMG8T2R

Manufacturer: ROHM Semiconductor

Description

TRANS 2NPN PREBIAS 0.15W EMT5

Technical Parameters

Parameter Value
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case 6-SMD (5 Leads), Flat Lead
Supplier Device Package EMT5

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