UMD6NTR

Manufacturer: ROHM Semiconductor

Description

TRANS NPN/PNP PREBIAS 0.15W UMT6

Technical Parameters

Parameter Value
Product Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) -
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package UMT6

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