IMD9AT108

Manufacturer: ROHM Semiconductor

Description

TRANS NPN/PNP PREBIAS 0.3W SMT6

Technical Parameters

Parameter Value
Product Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 300mW
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Supplier Device Package SMT6

Industry News