EMD29T2R
Manufacturer:
ROHM Semiconductor
Category:
Bipolar Transistor Arrays, Pre-Biased
Description
TRANS NPN/PNP PREBIAS 0.12W EMT6
$0.45
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Resistor - Base (R1) | 1kOhms, 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA / 300mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz, 260MHz |
| Power - Max | 120mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |