IMH23T110

Manufacturer: ROHM Semiconductor

Description

TRANS PREBIAS DUAL NPN SMT6

Technical Parameters

Parameter Value
Product Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 20V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 820 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) -
Frequency - Transition 150MHz
Power - Max 300mW
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Supplier Device Package SMT6

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