IMB3AT110

Manufacturer: ROHM Semiconductor

Description

TRANS PREBIAS DUAL PNP SMT6

Technical Parameters

Parameter Value
Product Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 5mA
Current - Collector Cutoff (Max) -
Frequency - Transition 250MHz
Power - Max 300mW
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Supplier Device Package SMT6

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