NSTB1002DXV5T1

Manufacturer: onsemi

Description

TRANS NPN PREBIAS/PNP 0.5W SOT55

Technical Parameters

Parameter Value
Product Status Obsolete
Transistor Type 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) 100mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 50V, 40V
Resistor - Base (R1) 47kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 100 @ 1mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 500mW
Mounting Type Surface Mount
Package / Case SOT-553
Supplier Device Package SOT-553

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