JANS2N3810L/TR

Manufacturer: Microsemi

Description

BJTS

Technical Parameters

Parameter Value
Product Status Active
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) -
Voltage - Collector Emitter Breakdown (Max) -
Vce Saturation (Max) @ Ib, Ic 250mV @ 100μA, 1mA
Current - Collector Cutoff (Max) 10μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V
Power - Max -
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-78-6 Metal Can
Supplier Device Package TO-78-6

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