2SC2839E-SPA-AC

Manufacturer: onsemi

Description

NPN EPITAXIAL PLANAR SILICON

Technical Parameters

Parameter Value
Product Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 20V
Frequency - Transition 320MHz
Noise Figure (dB Typ @ f) 3dB @ 100MHz
Gain 25dB
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 1mA, 6V
Current - Collector (Ic) (Max) 30mA
Operating Temperature -
Mounting Type Through Hole
Package / Case 3-SIP
Supplier Device Package 3-SPA

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