4MN10CH-TL-E

Manufacturer: onsemi

Description

BIP NPN 0.1A 200V

Technical Parameters

Parameter Value
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 200V
Frequency - Transition 400MHz
Noise Figure (dB Typ @ f) -
Gain -
Power - Max 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 10V
Current - Collector (Ic) (Max) 100mA
Operating Temperature -
Mounting Type Surface Mount
Package / Case SC-96
Supplier Device Package 3-CPH

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